inchange semiconductor product specification silicon pnp power transistors D45H8 description ? ? with to-220c package ? fast switching speeds ? low collector saturation voltage applications ? for general purpose power amplifications and switching regulators,converters and power amplifiers applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -10 a i cm collector current-peak -20 a t c =25 ?? 50 p d total power dissipation t a =25 ?? 1.67 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 2.5 ??/w fig.1 simplified outline (to-220) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors D45H8 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-10ma i b =0, -60 v v cesat collector-emitter saturation voltage i c =-8a ;i b =-0.4a -1.0 v v besat base-emitter saturation voltage i c =-8a ;i b =-0.8a -1.5 v i ces collector cut-off current v ce =-80v; v be =0 -10 | a i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe-1 dc current gain i c =-2a ; v ce =-1v 60 h fe-2 dc current gain i c =-4a ; v ce =-1v 40 f t transition frequency i c =-0.5a ; v ce =-10v 40 mhz c cb collector capacitance f=1mhz ; v cb =-10v 230 pf switching times t on turn-on time 135 ns t s storage time 0.5 | s t f fall time i c =-5a i b1 =- i b2 =-0.5a 0.10 | s
inchange semiconductor product specification 3 silicon pnp power transistors D45H8 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm)
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